Four-point probe characterization of 4H silicon carbide

Design, Modeling, Testing, and Spice Parameter Extraction of Dimos Transistor in 4h-silicon Carbide

In this paper, an analytical model for a vertical double implanted metal-oxide semiconductor (DIMOS) transistor structure in 4H-Silicon Carbide (SiC) is presented. Simulation for transport characteristics of the SiC MOSFET with the exact device geometry is carried out using the commercial device simulator MEDICI. A rigorous experimental testing and characterization is done on a 4H-SiC DIMOS tra...

Design, Modeling, and Characterization of Power MOSFET in 4H-SiC for Extreme Environment Applications

Silicon Carbide (SiC) is an emerging technology for extreme environment electronics applications. In this paper, an analytical model for vertical DIMOS transistor structure in SiC is presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. A good agreement between the analytical model and...

Measurement of Figure of Merit for a Single β-Silicon Carbide Nanowire by the Four-Point Three-ω Method

The thermoelectric figure of merit (ZT) of a single β-Silicon Carbide (SiC) nanowire (NW) was measured using the four-point three-omega (3-ω) method for the first time. The electrical conductivity (σ), thermal conductivity (κ), and Seebeck coefficient (S) were measured on the same measurement platform consisting of four point probe. To this end, we developed a novel technique in which focused i...

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1-4 cm² were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low da...

Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quantum bit